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Power MOSFETs
Q-Class
IXTQ 23N60Q
VDSS ID25
RDS(on)
= = =
600 V 23 A 0.32
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
Maximum Ratings 600 600 30 40 23 92 23 30 1.5 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C g
TO-3P (IXTQ)
G
D
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features IXYS advanced low gate charge process International standard package Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 6
1.13/10 Nm/lb.in.
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C
Characteristic Values Min. Typ. Max. 600 2.5 4.5 100 25 1 0.32 V V nA A mA
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2003 IXYS All rights reserved
DS99080(08/03)
IXTQ 23N60Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 10 20 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 410 130 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 (External) 20 45 20 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 45 0.31 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W TO-3P Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 23 92 1.5 500 A A V ns
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 23N60Q
Fig. 1. Output Characte ristics @ 25 Deg. C
25 VGS = 10V 7V 20 6V 40 50 VGS = 10V 7V
Fig. 2. Extende d Output Characte ris tics @ 25 deg. C
I D - Amperes
15
I D - Amperes
30
6V
10
20
5
5V
10 5V
0 0 2 4 6 8 10
0 0 5 10 15 20 25 30
V D S - Volts Fig. 3. Output Characteris tics @ 125 Deg. C
25 VGS = 10V 7V 6V 3.1 2.8
V D S - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs . Junction Tem perature
V GS = 10V
20
R D S (on) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 I D = 23A I D = 11.5A
I D - Amperes
15
10
5V
5
0 0 5 10 15 20 25
0.4 -50 -25 0 25 50 75 100 125 150
V D S - Volts Fig. 5. RDS(on) Norm alized to ID25 Value vs . ID
3.1 2.8 VGS = 10V 20 25
TJ - Degrees Centigrade Fig. 6. Drain Curre nt vs. Case Tem pe rature
R D S (on) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0 10 20
TJ = 125C
I D - Amperes
TJ = 25C
15
10
5
0 30 40 50 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
(c) 2003 IXYS All rights reserved
IXTQ 23N60Q
Fig. 7. Input Adm ittance
35 30 40 25 TJ = -40C 25C 125C 50
Fig. 8. Trans conductance
I D - Amperes
g f s - Siemens
TJ = 125C 25C -40C 3.5 4 4.5 5 5.5 6 6.5
20 15 10 5 0
30
20
10
0 0 10 20 30 40 50 60
V G S - Volts Fig. 9. Source Curre nt vs. Source-ToDrain Voltage
70 60 8 50 10 VDS = 300V I D = 11.5A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 25C
40 30 20 10 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 TJ = 125C
6
4
2
0 0 20 40 60 80 100
V S D - Volts Fig. 11. Capacitance
10000 f = 1MHz 1
Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Re sis tance
Capacitance - pF
1000 C oss
R (th) J C - (C/W)
40
C iss
0.1
C rss 100 0 5 10 15 20 25 30 35 0.01 1 10 100 1000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
Pulse Width - milliseconds
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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